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Mitsubishi Electric and Infineon Technologies Collaborate to Standardize IGBT Module Package 2011-07-27
  Tokyo, Japan, November 1, 2010 - Mitsubishi Electric Corporation (TOKYO: 6503) and Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced today that they have collaborated to standardize the packages of insulated gate bipolar transistor (IGBT) modules used in inverters for motor control systems in industrial machinery. The Smart Series packaging will be used by the two companies to make IGBT module packages compatible, enabling the packages to be easily replaced by inverter manufacturers.
Mitsubishi Electric Adds "V1 Series" to Lineup of High-output Intelligent Power Modules 2011-07-27
  Tokyo, June 28, 2011 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today new 600V/800A intelligent power module (IPM) V1 Series for 37kW-class servo systems and 75kW-class inverter systems. Sales will begin on June 30, 2011. V1 Series IPMs are single packages of multiple chips, including power chips using insulated-gate bipolar transistors (IGBT) and their driving circuits, as well as a variety of protection circuits. Product Features Inverter power loss reduced by 15%• The two IGBT chips are carrier-stored trench gate bipolar transistors (CSTBT™) developed by Mitsubishi Electric. • Power loss in inverters is approximately 15% less than that in the existing PM800HSA060 model. Miniaturized motor control systems and enlarged output • 600V/800A model newly added to the V1 Series helps enlarge output volume. • Small package (120×90mm) is achieved with small motor control systems. Enhanced heat protection • Unlike V Series IPMs, which monitor case temperature, V1 Series IPMs monitor IGBT chips temperature. Environmental Standards V1 Series IPMs are compliant with the European Union's Restriction of Hazardous Substances Directive (RoHS) for electrical and electronic equipment.
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